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H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage
FEATURES
* CTR at IF = 10 mA, BVCER = 10 V: 20 % * Good CTR linearly with forward current * Low CTR degradation
A C NC 1 2 3 6B 5C 4E
* Very high collector emitter breakdown voltage - H11D1/H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V * Isolation test voltage: 5300 VRMS * Low coupling capacitance * High common mode transient immunity * Package with base connection * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
i179004 i179004
DESCRIPTION
The H11D1/H11D2/H11D3/H11D4 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. The H11D1/H11D2 are identical and the H11D3/H11D4 are identical.
AGENCY APPROVALS
* UL1577, file no. E52744 system code H or J, double protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending available with option 1 * BSI IEC60950 IEC60065 * FIMKO
APPLICATIONS
* Telecommunications * Replace relays
ORDER INFORMATION
PART H11D1 H11D2 H11D3 H11D4 H11D1-X007 H11D1-X009 H11D2-X007 H11D3-X007 Note For additional information on the available options refer to option information. REMARKS CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 20 %, DIP-6 CTR > 20 %, SMD-6 (option 7) CTR > 20 %, SMD-6 (option 9) CTR > 20 %, SMD-6 (option 7) CTR > 20 %, SMD-6 (option 7)
Document Number: 83611 Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
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H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage DC forward current Surge forward current Power dissipation OUTPUT H11D1 Collector emitter voltage H11D2 H11D3 H11D4 H11D1 Collector base voltage H11D2 H11D3 H11D4 Emitter base voltage Collector current Power dissipation COUPLER Isolation test voltage Insulation thickness between emitter and detector Creepage distance Clearance distance Comparative tracking index Isolation resistance Storage temperature range Operating temperature range Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm per DIN IEC 112/VDE 0303, part 1 VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C RIO RIO Tstg Tamb Tj Tsld between emitter and detector, refer to climate DIN 50014, part 2, Nov. 74 VISO 5300 0.4 7 7 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C VRMS mm mm mm VCE VCE VCE VCE VCBO VCBO VCBO VCBO VBEO IC Pdiss 300 300 200 200 300 300 200 200 7 100 300 V V V V V V V V V mA mW t 10 s VR IF IFSM Pdiss 6 60 2.5 100 V mA A mW TEST CONDITION PART SYMBOL VALUE UNIT
Note Tamb = 25 C, unless otherwise specified. Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
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For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611 Rev. 1.5, 19-Nov-07
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output, Vishay Semiconductors With Base Connection, High BVCER Voltage
ELECTRICAL CHARACTERISTCS
PARAMETER INPUT Forward voltage Reverse voltage Reverse current Capacitance Thermal resistance OUTPUT H11D1 Collector emitter breakdown voltage ICE = 1 mA, RBE = 1 M H11D2 H11D3 H11D4 Emitter base breakdown voltage Collector emitter capacitance Collector base capacitance Emitter base capacitance Thermal resistance COUPLER Coupling capacitance Current transfer ratio Collector emitter, saturation voltage IF = 10 mA, VCE = 10 V, RBE = 1 M IF = 10 mA, IC = 0.5 mA, RBE = 1 M VCE = 200 V, RBE = 1 M Collector emitter, leakage current VCE = 300 V, RBE = 1 M, Tamb = 100 C H11D1 H11D2 H11D1 H11D2 CC IC/IF VCEsat ICER ICER ICER ICER 20 0.25 0.4 100 100 250 250 0.6 pF % V nA nA A A IEB = 100 A VCE = 10 V, f = 1 MHz VCB = 10 V, f = 1 MHz VEB = 5 V, f = 1 MHz BVCER BVCER BVCER BVCER BVEBO CCE CCB CEB Rth 300 300 200 200 7 7 8 38 250 V V V V V pF pF pF K/W IF = 10 mA IR = 10 A VR = 6 V VR = 0 V, f = 1 MHz VF VR IR CO RthJA 6 0.01 25 750 10 1.1 1.5 V V A pF K/W TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER Current transfer ratio TEST CONDITION IF = 10 mA, VCE = 10 V, RBE = 1 M PART SYMBOL CTR MIN. 20 TYP. MAX. UNIT %
SWITCHING CHARACTERISTICS
PARAMETER Turn-on time Rise time Turn-off time Fall time TEST CONDITION IC = 2 mA (to be adjusted by varying IF), RL = 100 , VCC = 10 V IC = 2 mA (to be adjusted by varying IF), RL = 100 , VCC = 10 V IC = 2 mA (to be adjusted by varying IF), RL = 100 , VCC = 10 V IC = 2 mA (to be adjusted by varying IF), RL = 100 , VCC = 10 V SYMBOL ton tr toff tf MIN. TYP. 5 2.5 6 5.5 MAX. UNIT s s s s
Note Switching times measurement-test circuit and waveforms
Document Number: 83611 Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com 3
H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage
TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
1.2 1.0 0.8 0.6 0.4 0.2 0 10
ih11d1_02
-4
30 25 20
ICE = f (VCE, IF)
ICE (mA)
NTCR
IF =100 A IF = 80 A IF = 60 A IF = 40 A IF = 20 A 10
-2
15 10
VCE = 10 V, normalized to IF = 10 mA, NCTR = f (IF) 10
-3
5 0
10
-2
10
-1
10
-1
10
0
101
102
IF (A)
Fig. 1 - Current Transfer Ratio (typ.)
ih11d1_05
VCE (V)
Fig. 4 - Output Characteristics
1.2 VF = f (IF, TA) 25 C 50 C 75 C
100 90 80 70 60 50 40 30 20 10 0 10-1 100 101 102 10-2
ih11d1_06
f = 1 MHz, CCE = f (VCE) CCB = f (VCB), CEB = f (VEB) CEB
1.1
VF (V)
CXX (pF)
1.0
CCB CCE
0.9
ih11d1_03
10-1
100
101
102
IF (mA)
VXX (V)
Fig. 2 - Diode Forward Voltage (typ.)
Fig. 5 - Transistor Capacitances (typ.)
20 17.5 15
10-6 ICE = f (VCE, IB) 10-7 IB =100 A 10-8 IF = 0, RBE = 1 M ICER = f (VCE)
ICE (mA)
12.5
CCER (A)
10 7.5 5 2.5 0 10-2 10-1 100
IB = 80 A IB = 60 A IB = 40 A
10-9 10-10 10-11
IB = 20 A 10-12 101 102 0
ih11d1_07
25
50
75
100 125 150 175 200
ih11d1_04
VCE (V)
Fig. 3 - Output Characteristics
VCE (V)
Fig. 6 - Collector Emitter Leakage Current (typ.)
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For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611 Rev. 1.5, 19-Nov-07
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output, Vishay Semiconductors With Base Connection, High BVCER Voltage
100 90 80 70 60 50 40 30 20 10 0 0
ih11d1_08
400 IF = f (TA) 350 300 Ptot = f (TA)
Ptot (mW)
IF (mA)
250 200 transistor 150 100 50 0 diode 0 10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
TA (C)
ih11d1_09
TA (C)
Fig. 7 - Permissible Loss Diode
Fig. 8 - Permissible Power Dissipation
Input 0 IF RL IC 47 VCC Output VO GND 0 10 % 50 % 90 % 10 % 50 % 90 % ton tpdon td tr tpdoff ts tr toff
ih11d1_01
Fig. 9 Switching Times Measurement-Test Circuit and Waveform
Document Number: 83611 Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com 5
H11D1/H11D2/H11D3/H11D4
Vishay Semiconductors
Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage
PACKAGE DIMENSIONS in inches (millimeters)
3 0.248 (6.30) 0.256 (6.50) 4 5 6
ISO Method A
2
1
Pin one ID
0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 4 typ. 0.018 (0.45) 0.022 (0.55)
i178004
0.048 (0.45) 0.022 (0.55) 0.130 (3.30) 0.150 (3.81)
0.300 (7.62) typ.
18 0.031 (0.80) min. 0.031 (0.80) 0.035 (0.90) 0.100 (2.54) typ. 3to 9 0.010 (0.25) typ. 0.300 - 0.347 (7.62- 8.81)
0.114 (2.90) 0.130 (3.0)
Option 7
0.300 (7.62) typ.
Option 9
0.375 (9.53) 0.395 (10.03) 0.300 (7.62) ref.
0.028 (0.7) min.
0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.331 (8.4) min. 0.406 (10.3) max.
0.0040 (0.102) 0.0098 (0.249)
0.020 (0.51) 0.040 (1.02)
0.315 (8.00) min.
0.012 (0.30) typ.
15 max.
18494
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For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83611 Rev. 1.5, 19-Nov-07
H11D1/H11D2/H11D3/H11D4
Optocoupler, Phototransistor Output, Vishay Semiconductors With Base Connection, High BVCER Voltage
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 83611 Rev. 1.5, 19-Nov-07
For technical questions, contact: optocouplers.answers@vishay.com
www.vishay.com 7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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